PART |
Description |
Maker |
W986416BH |
1M words x 16 bit x 4 Banks SDRAM(1Mx 16 x 4 组同步动态RAM)
|
Winbond Electronics Corp
|
IS42S16100 |
512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
|
Integrated Silicon Solution Inc
|
EDE1108AASE-6E-E EDE1104AASE EDE1104AASE-4A-E EDE1 |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.
|
ELPIDA[Elpida Memory]
|
W9812G2GH-75 W9812G2GH-6I W9812G2GH-6C |
a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words × 4 banks × 32 bits
|
Winbond
|
W9812G2GH-6I |
a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ??4 banks ??32 bits
|
WINBOND ELECTRONICS CORP
|
IS42S16128-8T IS42S16128-12T |
Chassis Mount and Din Rail Filters RoHS Compliant: Yes 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc. DRAM
|
MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs 256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE 256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE 256K (32768 words X 8 bits) SRAM Control Pins: OE and CE 256K (32768 words 8 bits) SRAM Control Pins: OE and CE SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC From old datasheet system
|
Intersil Sanyo Semiconductor Corp SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks 2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|